The Baltic ALD 2010 & GerALD 2 will be a two-day meeting, dedicated to the science and technology of atomic layer controlled deposition of thin films. Atomic layer deposition (ALD) is a technology providing the ultrathin and conformal coatings for many semiconductor and thin film device applications.

ALD relies on sequential self-limiting surface reactions to achieve film growth control with monolayer or sub-monolayer precision. The application potential of ALD is wide-spread. Established applications are the deposition of advanced high dielectric constant (high-k) gate oxides, storage capacitor dielectrics and copper diffusion barriers in advanced electronic devices, as well as upcoming applications for solar energy, optics and even bio-inspired routes.

Generally, ALD is of interest for all kinds of advanced technologies that require coatings with precision in the nanometer or sub-nanometer scale.

The conference will cover all aspects of ALD research and development, including:

• ALD/MLD Precursors and Precursor Design
• Simulation, Modeling, and Theory of ALD
• Reaction Mechanisms for Atomic Layer Growth
• In-situ Monitoring and Analysis
• ALD Surface Chemistry and Initiation of ALD Growth
• Surface Preparation for ALD
• Radical and Other Energy-Enhanced ALD Methods
• Patterned and Selective Area ALD
• Equipment and Manufacturing
• Applications of ALD 
• Nano-laminate or Multi-component Materials

• Titta Aaltonen:"Reaction mechanisms studies on ALD of complex lithium compounds"
• Helmut Baumgart:"Microfluidic Applications Utilizing Atomic Layer Deposition Nanotechnology"
• David Cameron:"Continuous and roll-to-roll atomic layer deposition"
• Anjana Devi:"Precursor engineering for ALD of functional metal oxides"
• Steven George:"Nucleation and Growth of Continuous and Ultrathin Pt Films Using Plasma-Enhanced Atomic Layer Deposition"
• Suvi Haukka:"The self-limiting nature of surface reactions in atomic layer deposition"
• Susanne Hoffmann-Eifert:"ALD grown functional oxide layers for nonvolatile memory applications"
• Grzegorz Luka:"Atomic layer deposition of ZnO and AlZnO films for organic electronics"
• Lauri Niinistö:"Advanced Materials and Processes by Atomic Layer Deposition"
• Gregory Parsons:"Atmospheric Pressure Atomic Layer Deposition in a Flow-Tube Reactor<"
• Viljami Pore:"Atomic Layer Deposition of GeSbTe Thin Films"
• Stephen Potts:"Plasma-Enhanced ALD for Opening the ALD Temperature Window"
• Dieter Schmeißer:"in-situ studies of initial growth and functionalities in HfO2 ALD layers on Si"
• Uwe Schroeder:"Correlation of the Electrical Characteristics to the Structural Properties of ALD Grown High k Dielectrics"
• Hyunjung Shin:"Conformal coatings and their energy applications of oxide materials on nanotemplates"

Prof. Dr. Kornelius Nielsch
Institute of Applied Physics
University of Hamburg
Jungiusstrasse 11
20355 Hamburg
Germany

Dr. Mato Knez
Max-Planck-Institute of
Microstructure Physics
Weinberg 2
06120 Halle
Germany

• Anders Harsta
• Marek Godlewski
• Markku Leskelä
• Mikko Ritala
• Marit Karppinen
• Erwin Kessels
• Ola Nilsen

• Julien Bachmann
• Detlef Görlitz
• Robert Zierold
• Stephanie Baer
• Iris Klüver

Download the conference flyer